Measurement of polarization charge and conduction-band offset at InxGa1-xN/GaN heterojunction interfaces
Identifieur interne : 00A411 ( Main/Repository ); précédent : 00A410; suivant : 00A412Measurement of polarization charge and conduction-band offset at InxGa1-xN/GaN heterojunction interfaces
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Abstract
The spontaneous and piezoelectric polarization fields in group-III nitride semiconductors lead to the presence of large electrostatic sheet charge densities at nitride semiconductor heterojunction interfaces. Precise quantitative knowledge of these polarization-induced charge densities and of the band-edge discontinuities at nitride heterojunction interfaces is therefore essential in nitride semiconductor device design and analysis. We have used capacitance-voltage profiling to measure the conduction-band offset and polarization charge density at InxGa1-xN/GaN heterojunction interfaces with x=0.054 and x=0.09. We obtain conduction-band offsets ΔEC=0.09±0.07 eV for x=0.054 and ΔEC=0.22±0.05 eV for x=0.09, corresponding to an averaged conduction-to-valence-band offset ratio ΔEC:ΔEV of 58:42. Our measurements yield polarization charge densities of (1.80±0.32)×1012 e/cm2 for x=0.054 and (4.38±0.36)×1012 e/cm2 for x=0.09. These values are smaller than those predicted by recent theoretical calculations, but in good agreement with values inferred from a number of optical experiments. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Measurement of polarization charge and conduction-band offset at In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterojunction interfaces</title><author><name sortKey="Zhang, H" uniqKey="Zhang H">H. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla</wicri:cityArea></affiliation></author><author><name sortKey="Miller, E J" uniqKey="Miller E">E. J. Miller</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla</wicri:cityArea></affiliation></author><author><name sortKey="Yu, E T" uniqKey="Yu E">E. T. Yu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla</wicri:cityArea></affiliation></author><author><name sortKey="Poblenz, C" uniqKey="Poblenz C">C. Poblenz</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Department, University of California at Santa Barbara, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Speck, J S" uniqKey="Speck J">J. S. Speck</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Department, University of California at Santa Barbara, Santa Barbara</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0242352</idno><date when="2004-06-07">2004-06-07</date><idno type="stanalyst">PASCAL 04-0242352 AIP</idno><idno type="RBID">Pascal:04-0242352</idno><idno type="wicri:Area/Main/Corpus">00B730</idno><idno type="wicri:Area/Main/Repository">00A411</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge measurement</term><term>Conduction bands</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Nitrogen compounds</term><term>Polarization</term><term>Semiconductor heterojunctions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340K</term><term>8105E</term><term>Etude expérimentale</term><term>Hétérojonction semiconducteur</term><term>Indium composé</term><term>Gallium composé</term><term>Azote composé</term><term>Polarisation</term><term>Mesure charge électrique</term><term>Bande conduction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The spontaneous and piezoelectric polarization fields in group-III nitride semiconductors lead to the presence of large electrostatic sheet charge densities at nitride semiconductor heterojunction interfaces. Precise quantitative knowledge of these polarization-induced charge densities and of the band-edge discontinuities at nitride heterojunction interfaces is therefore essential in nitride semiconductor device design and analysis. We have used capacitance-voltage profiling to measure the conduction-band offset and polarization charge density at In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterojunction interfaces with x=0.054 and x=0.09. We obtain conduction-band offsets ΔE<sub>C</sub>=0.09±0.07 eV for x=0.054 and ΔE<sub>C</sub>=0.22±0.05 eV for x=0.09, corresponding to an averaged conduction-to-valence-band offset ratio ΔE<sub>C</sub>:ΔE<sub>V</sub> of 58:42. Our measurements yield polarization charge densities of (1.80±0.32)×10<sup>12</sup> e/cm<sup>2</sup> for x=0.054 and (4.38±0.36)×10<sup>12</sup> e/cm<sup>2</sup> for x=0.09. These values are smaller than those predicted by recent theoretical calculations, but in good agreement with values inferred from a number of optical experiments. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Measurement of polarization charge and conduction-band offset at In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterojunction interfaces</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (H.)</s1></fA11><fA11 i1="02" i2="1"><s1>MILLER (E. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>YU (E. T.)</s1></fA11><fA11 i1="04" i2="1"><s1>POBLENZ (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>SPECK (J. S.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>4644-4646</s1></fA20><fA21><s1>2004-06-07</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0242352</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The spontaneous and piezoelectric polarization fields in group-III nitride semiconductors lead to the presence of large electrostatic sheet charge densities at nitride semiconductor heterojunction interfaces. Precise quantitative knowledge of these polarization-induced charge densities and of the band-edge discontinuities at nitride heterojunction interfaces is therefore essential in nitride semiconductor device design and analysis. We have used capacitance-voltage profiling to measure the conduction-band offset and polarization charge density at In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterojunction interfaces with x=0.054 and x=0.09. We obtain conduction-band offsets ΔE<sub>C</sub>=0.09±0.07 eV for x=0.054 and ΔE<sub>C</sub>=0.22±0.05 eV for x=0.09, corresponding to an averaged conduction-to-valence-band offset ratio ΔE<sub>C</sub>:ΔE<sub>V</sub> of 58:42. Our measurements yield polarization charge densities of (1.80±0.32)×10<sup>12</sup> e/cm<sup>2</sup> for x=0.054 and (4.38±0.36)×10<sup>12</sup> e/cm<sup>2</sup> for x=0.09. These values are smaller than those predicted by recent theoretical calculations, but in good agreement with values inferred from a number of optical experiments. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C40K</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7340K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Azote composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nitrogen compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Polarisation</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Polarization</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Mesure charge électrique</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Charge measurement</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Bande conduction</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Conduction bands</s0></fC03><fN21><s1>152</s1></fN21><fN47 i1="01" i2="1"><s0>0421M000132</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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